creat by art - low profile package - ideal for automated placement - glass passivated junction - built-in strain relief - excellent clamping capability - halogen-free according to iec 61249-2-21 definition - aec-q101 qualified molding compound, ul flammability classification rating 94v-0 packing code with suffix "g" means green compound (halogen-free) terminal: matte tin plated leads, solderable per jesd22-b102 meet jesd 201 class 2 whisker test symbol unit p pk watts p d watts t j c t stg c document number: ds_d1502001 version: a15 - compliant to rohs directive 2011/65/eu and in accordance to weee 2002/96/ec do-214ac (sma) sma6j series taiwan semiconductor surface mount transient volta g e su pp ressor features - fast response time: typically less than 1.0ps from 0 volt to bv min - moisture sensitivity level: level 1, per j-std-020 - 600 watts peak pulse power capability with a 10 / 1000 s waveform mechanical data case: do-214ac (sma) polarity: indicated by cathode band weight: 0.06 g (approximately) maximum ratings and electrical characteristics (t a =25c unless otherwise noted) parameter value peak power dissipation at t a =25c, tp=1ms(note 1) 600 peak forward surge current, 8.3 ms single half sine-wave superimposed on rated load i fsm 50 a steady state power dissipation 4 storage temperature range - 55 to +175 note 1: non-repetitive current pulse per fig. 3 and derated above t a =25c per fig. 2 c/w r ja r jl typcial thermal resistance 56 20 operating junction temperature range - 55 to +175
creat by art document number: ds_d1502001 version: a15 order information (example) ratings and characteristics curves (t a =25c unless otherwise noted) sma6j series taiwan semiconductor 0 10 20 30 40 50 1 10 100 ifsm, peak forward surge current (a) number of cycles at 60 hz fig. 2 maximum non-repetitive forward surge current unidirectional only 8.3ms single half sine wave 0 20 40 60 80 100 120 140 00.511.522.533.54 peak pulse current (%) t, time ms fig. 3 clamping power pulse waveform td peak value i ppm tr=10 s, waveform as defined by r.e.a. pulse width(td) is defined as the point where the peak current decays to 50% of ippm 10 100 1000 10000 1 10 100 cj, junction capacitance (pf) a v( br ), breakdown voltage (v) fig. 4 typical junction capacitance f=1.0mhz vsig=50mvp-p 0.1 1 10 100 0.1 1 10 100 1000 10000 p ppm , peak pulse power, kw tp, pulse width, (us) fig. 1 peak pulse power rating curve non-repetitive pulse waveform shown in fig.3 sma6j26a r3g green compound ? code packing ? code part ? no.
creat by art test maximum current reverse leakage i t @ v wm min max (ma) i d (ua) SMA6J10A 6ax 10 11.1 12.3 1 15.7 38.2 1.0 sma6j11a 6az 11 12.2 13.5 1 17.2 24.8 1.0 sma6j12a 6be 12 13.3 14.7 1 18.8 31.9 1.0 sma6j13a 6bg 13 14.4 15.9 1 20.4 29.4 1.0 sma6j15a 6bm 15 16.7 18.5 1 23.6 25.4 1.0 sma6j16a 6bp 16 17.8 19.7 1 25.2 23.8 1.0 sma6j17a 6br 17 18.9 20.9 1 26.7 22.5 1.0 sma6j18a 6bt 18 20 22.1 1 28.3 21.2 1.0 sma6j20a 6bv 20 22.2 24.5 1 31.4 19.1 1.0 sma6j22a 6bx 22 24.4 26.9 1 34.5 17.4 1.0 sma6j24a 6bz 24 26.7 29.5 1 37.8 15.9 1.0 sma6j26a 6ce 26 28.9 31.9 1 40.9 14.7 1.0 sma6j28a 6cg 28 31.1 34.4 1 44.0 13.6 1.0 sma6j30a 6ck 30 33.3 36.8 1 48.4 12.3 1.0 document number: ds_d1502001 version: a15 sma6j series taiwan semiconductor device device marking code working peak reverse voltage v wm (v) breakdown voltage maximum clamping voltage at i ppm vc (v) maximum peak pulse surge current i ppm (a) v br (v) at i t
min max min max a 1.27 1.58 0.050 0.062 b 4.06 4.60 0.160 0.181 c 2.29 2.83 0.090 0.111 d 1.99 2.50 0.078 0.098 e 0.90 1.41 0.035 0.056 f 4.95 5.33 0.195 0.210 g 0.10 0.20 0.004 0.008 h 0.15 0.31 0.006 0.012 p/n = device marking code g = green compound yw = date code f = factory code document number: ds_d1502001 version: a15 sma6j series taiwan semiconductor package outline dimensions dim. unit (mm) unit (inch) do-214ac (sma) 2.41 e5.45 suggested pad layout symbol unit (mm) a1.68 b1.52 marking diagram unit (inch) 0.066 0.060 0.155 0.095 0.215 c3.93 d
creat by art assumes no responsibility or liability for any errors or inaccuracies. information contained herein is intended to provide a product description only. no license, express or implied,to any intellectual property rights is granted by this document. except as provided in tsc's terms and conditions of sale for such products, tsc assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of tsc products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right. the products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. customers using or seling these products for use in such applications do so at their own risk and agree to fully indemnify tsc for any damages resulting from such improper use or sale. document number: ds_d1502001 version: a15 sma6j series taiwan semiconductor notice specifications of the products displayed herein are subject to change without notice. tsc or anyone on its behalf,
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